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United States Federal Circuit


Hynix Semiconductor Inc. v. Rambus Inc., 2009-1299

In companion patent infringement actions arising from several claims involving Synchronous Dynamic Random Access Memory (SDRAM) and Double Data Rate SDRAM memory (DDR SDRAM) in memory chip technology, judgment of the district court is affirmed in part and reversed in part where court: 1) improperly applied too narrow a standard of foreseeability in determining that litigation was not reasonably foreseeable until 1999; 2) properly passed judgment on waiver and estoppel grounds; 3) properly construed claims; 4) properly denied plaintiff's motion for JMOL or a new trial; 5) properly denied plaintiff's motion for a new trail on the basis of obviousness; and 6) properly granted plaintiff's motion for summary judgment of non-infringement under proposed claim construction challenge.

Appellate Information

  • Decided 05/13/2011
  • Published 05/13/2011

Judges

  • LINN

Court

  • United States Federal Circuit

Counsel

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